The effects of the band gap and defects in silicon nitride on the carrier lifetime and the transmittance in c-Si solar cells - ScienceDirect
Variation of energy band gap of the prepared Si3N4 samples with... | Download Scientific Diagram
The effects of the band gap and defects in silicon nitride on the carrier lifetime and the transmittance in c-Si solar cells - ScienceDirect
Band gap tuning of a-Si:H from 1.55 eV to 2.10 eV by intentionally promoting structural relaxation - ScienceDirect
Band gap determination of graphene, h-boron nitride, phosphorene, silicene, stanene, and germanene nanoribbons - IOPscience
Electrically tunable band gap in strained h-BN/silicene van der Waals heterostructures - Physical Chemistry Chemical Physics (RSC Publishing) DOI:10.1039/D1CP02012A
Band gap tuning of a-Si:H from 1.55 eV to 2.10 eV by intentionally promoting structural relaxation - ScienceDirect
The effects of the band gap and defects in silicon nitride on the carrier lifetime and the transmittance in c-Si solar cells - ScienceDirect
Band gap of C3N4 in the GW approximation - ScienceDirect
Tuning the Electronic Band Gap of Oxygen-Bearing Cubic Zirconium Nitride: c-Zr3–x(N1–xOx)4 | ACS Applied Electronic Materials
Transition of wide-band gap semiconductor h-BN(BN)/P heterostructure via single-atom-embedding - Journal of Materials Chemistry C (RSC Publishing) DOI:10.1039/D0TC02371J
Approaching theoretical band gap of ZnSnN2 films via bias magne- tron co-sputtering at room temperature
Band gap tuning of a-Si:H from 1.55 eV to 2.10 eV by intentionally promoting structural relaxation - ScienceDirect
Tuning the Electronic Band Gap of Oxygen-Bearing Cubic Zirconium Nitride: c-Zr3–x(N1–xOx)4 | ACS Applied Electronic Materials
Band gap tuning of a-Si:H from 1.55 eV to 2.10 eV by intentionally promoting structural relaxation - ScienceDirect
Electrically tunable band gap in strained h-BN/silicene van der Waals heterostructures - Physical Chemistry Chemical Physics (RSC Publishing) DOI:10.1039/D1CP02012A
Approaching theoretical band gap of ZnSnN2 films via bias magne- tron co-sputtering at room temperature
Electrically tunable band gap in strained h-BN/silicene van der Waals heterostructures - Physical Chemistry Chemical Physics (RSC Publishing) DOI:10.1039/D1CP02012A
Tuning the Electronic Band Gap of Oxygen-Bearing Cubic Zirconium Nitride: c-Zr3–x(N1–xOx)4 | ACS Applied Electronic Materials
Transition of wide-band gap semiconductor h-BN(BN)/P heterostructure via single-atom-embedding - Journal of Materials Chemistry C (RSC Publishing) DOI:10.1039/D0TC02371J
Band Gap Engineering and Room-Temperature Ferromagnetism by Oxygen Vacancies in SrSnO3 Epitaxial Films,ACS Applied Materials & Interfaces - X-MOL
Band gap narrowing in n-type and p-type 3C-, 2H-, 4H-, 6H-SiC, and Si: Journal of Applied Physics: Vol 86, No 8
Tuning the Electronic Band Gap of Oxygen-Bearing Cubic Zirconium Nitride: c-Zr3–x(N1–xOx)4 | ACS Applied Electronic Materials
Approaching theoretical band gap of ZnSnN2 films via bias magne- tron co-sputtering at room temperature
Transition of wide-band gap semiconductor h-BN(BN)/P heterostructure via single-atom-embedding - Journal of Materials Chemistry C (RSC Publishing)
The effects of the band gap and defects in silicon nitride on the carrier lifetime and the transmittance in c-Si solar cells - ScienceDirect
